1/5 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.03 - rev.a 10v drive nch mosfet R5011FNX z structure z dimensions (unit : mm) silicon n-channel mosfet z features 1) fast reverse recovery time. 2) low on-resistance. 3) fast switching speed. 4) gate-source voltage (v gss ) guaranteed to be 30v. 5) drive circuits can be simple. 6) parallel use is easy. z applications switching z inner circuit z packaging specifications package bulk basic ordering unit (pieces) 500 R5011FNX type z absolute maximum ratings (ta=25 c) parameter range of storage temperature channel temperature total power dissipation (tc=25 c) drain current gate-source voltage drain-source voltage v dss v gss p d tch 500 v v a w c 30 11 i d i dp continuous pulsed a 44 50 150 tstg c ? 55 to + 150 avalanche energy avalanche current i as 5.5 e as 8.1 symbol limits unit ? 1 pw 10 s, duty cycle 1% ? 1 ? 3 ? 3 i s a i sp a a mj continuous pulsed 11 44 source current (body diode) ? 1 ? 2 ? 2 ? 2 l 500 h, v dd = 50v, r g = 25 ? , starting, tch = 25 c ? 3 limited only by maximum temperature allowed z thermal resistance parameter c/w rth(ch-c) symbol limits unit c hannel to case 2.5 ? 1 body diode (1) gate (2) drain (3) source ? 1 (1) (2) (3) to-220fm (1) gate (2) drain (3) source 4.5 2.8 0.75 3.2 ( 2 )( 3 ) ( 1 ) 0.8 2.54 2.6 2.54 1.3 1.2 14.0 12.0 8.0 2.5 10.0 15.0
R5011FNX data sheet 2/5 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.03 - rev.a z electrical characteristics (ta=25 c) parameter gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed symbol i gss v (br)dss i dss v gs(th) r ds(on) c iss | y fs | c oss c rss min. ? 500 ? 2.0 ? ? 4.5 ? ? ? ? ? ? 0.40 950 ? 580 30 100 ? 100 4.0 0.52 ? ? ? ? na v gs = 30v, v ds = 0v i d = 1ma, v gs = 0v v ds = 500v, v gs = 0v v ds = 10v, i d = 1ma i d = 5.5a, v gs = 10v v ds = 25v v ds = 10v, i d = 5.5a v gs = 0v f = 1mhz v a v ? pf s pf pf t d(on) ? 26 ? v dd 250v, i d = 5.5a ns t r ? 28 ? v gs = 10v ns t d(off) ? 75 ? r l = 45.5 ? ns t f ? 30 ? r g = 10 ? ns q g ? 30 ? v dd 250v i d = 11a v gs = 10v r l = 22.7 ? / r g = 10 ? nc q gd ? 12 ? nc typ. max. unit conditions ? ? ? ? ? ? ? ? q gs ? 7 ? nc ? z body diode characteristics (source-drain) (ta=25 c) v sd ?? 1.5 115 85 55 v ns i s = 11a, v gs =0v i f = 11a, di/dt=100a/ s forward voltage forward recovery time ? pulsed parameter symbol min. typ. max. unit conditions ? ? t rr
R5011FNX data sheet 3/5 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.03 - rev.a z electrical characteristic curves 0 5 10 15 20 0 1020304050 ta= 25c pulsed 5.0v v gs = 4.5v 6.0v 7.0v 8.0v 6.5 10v 5.5v fig.2: typical output characteristics( ) 0.001 0.01 0.1 1 10 100 0.0 1.5 3.0 4.5 6.0 v ds = 10v pulsed ta= 125c ta= 75c ta= 25c ta= -25c fig.4 typical transfer characteristics 0.01 0.1 1 10 0.1 1 10 100 v gs = 10v pulsed ta= 125c ta= 75c ta= 25c ta= -25c fig.6 static drain-source on-state resistance vs. drain current 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 5 10 15 ta=25c pulsed i d = 11.0a i d = 5.5a fig.7 static drain-source on-state resistance vs. gate source 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds = 10v pulsed ta= -25c ta= 25c ta= 75c ta= 125c fig.9 forward transfer admittance vs. drain current 0.01 0.1 1 10 100 0.1 1 10 100 1000 tc = 25c single pulse dc operation p w = 100us operation in this area is limited p w = 1ms fig.1 maximum safe operating aera fig.3: typical output 0 2 4 6 8 10 012345 ta= 25c pulsed v gs = 4.5v 5.0v 6.0v 5.5v 6.5v 7.0v 8.0v 10v fig.8 static drain-source on-state resistance vs. channel tem p erature 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 v gs = 10v pulsed i d = 5.5a i d = 11.0a fig.5 gate threshold voltage vs. channel temperature 0 1 2 3 4 5 6 -50 0 50 100 150 v ds = 10v i d = 1ma drain-source voltage : vds ( v ) drain current : i d (a) drain-source voltage: vds (v) drain current: i d (a) drain-source voltage: v ds (v) drain current: i d (a) drain current : i d (a) static drain-source on-stat e resistance : r ds(on) ( ? ) channel temperature: t ch (c) gate threshold voltage: v gs(th) (v) gate-source voltage : v gs (v) drain current : i d (a) gate-source voltage : v gs (v) static drain-source on-stat e resistance : r ds(on) ( ? ) channel temperature: t ch (c) static drain-source on-state resistance : r ds(on ) ( ? ) drain current : i d (a) forward transfer admittance : |yfs| (s)
R5011FNX data sheet 4/5 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.03 - rev.a 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 ta = 25c single pulse : 1unit rth ch-a t = t rth ch-a rth ch-a = 50.4c/w 10 100 1000 0.1 1 10 100 ta= 25c di/dt= 100a/s v gs = 0v pulsed fig.13 reverse recovery time vs.reverse drain current 0.01 0.1 1 10 100 0 0.5 1 1.5 v gs = 0v pulsed ta= 125c ta= 75c ta= 25c ta= -25c fig.10 reverse drain current vs. sourse-drain voltage 0 5 10 15 0 10203040 ta= 25c v dd = 250v i d = 11.0a r g = 10 ? pulsed fig.12 dynamic input characteristics 1 10 100 1000 10000 0.01 0.1 1 10 100 1000 c iss c oss c rss ta= 25c f= 1mhz v gs = 0v fig.11 typical capacitance vs. drain-source voltage 1 10 100 1000 10000 0.1 1 10 100 ta= 25c v dd = 250v v gs = 10v r g = 10 ? pulsed t r t d(on) t f t d(off) fig.14 switching characteristics fig.15 normalized transient thermal resistance vs. pulse width total gate charge : q g (nc) gate-source voltage : v gs (v) drain-source voltage : v ds (v) capacitance : c (pf) source-drain voltage : v sd (v) reverse drain current : i dr (a) reverse drain current : i dr (a) reverse recovery time: t rr (ns) drain current : i d (a) switching time : t (ns) pulse width : pw(s) normarized transient therma l resistance : r (t)
R5011FNX data sheet 5/5 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.03 - rev.a z switching characteristics measurement circuit fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform fig.3-1 avalanche measurement circuit fig.3-2 avalanche waveform i g (const.)
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